silicon wafer
Negotiable
Min.Order:1
Jianghai Non-Woven Fabric Co., Ltd.
125 Mono crystalline Wafer Specification |
Growth Method | CZ |
Conductive Type | P |
Dopant | B |
Orientation | 100 |
Off Orientation | ±3° |
Resistivity(ρ) | 0.5 3 Ω·cm or 3- 6 Ω·cm |
Minority Carrier Lifetime | ≥10μs |
Oxygen Content (Oi) | ≤1.0*1018 /cm3 |
Carbon Content(C) | ≤5.0*1016 / cm3 |
Dimension | 125*125±0.5mm |
Diagonal | 150±0.5mm |
Square Sides Angle | 90±0.5° |
Streight Sections Length Deviation | 21.25±1mm |
Thickness | 200±20 μm |
TTV | ≤30μm |
Saw Mark | ≤20μm |
Warp | ≤75μm |
Chips | Depth<0.3mm;Length<0.5mm |
Appearance | No Stain, No Pinhole and Cracks by Visual Inspection |