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808nm 500mw Diode Laser Apparatus
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Chongqing Sifit Machinery Co., Ltd.
Business license
Business Type: Manufacturer
Chongqing ChinaMain Products: Custom Machining Parts ,Powder Metallurgy Parts ,Stamping Parts ,Forging parts ,Casting partsProduct Details
Product Name: 808nm 500mw Diode Laser Apparatus
Specification
Conventional Wavelength Section
405nm, 450nm, 520nm, 635nm, 650nm, 780nm, 808nm, 830nm, 850nm, 980nm etc...
Characteristic
1. Single chip typical optical power 50w
2. Single diverge Angle θ⊥≤30
3. A variety of packaging form
4. High overload
Application Field
1. Laser ranging
2. Laser fuze
3. IR illumination
4. Automotive anti-collision system
5. Material analysis
The performance parameters: (Ta =25℃)
LL905-2-5-H | Parameter | Symbol | Unit | Min | Typ. | Max |
Electrical performance | ||||||
The pulse width | Tw | ns |
| 100 | 200 | |
Duty ratio | δ | % |
| 0.1 | 0.2 | |
Peak current | Ineak | A |
| 30 | 1.5 | |
Threshold current |
| A | 0.5 | 1 | 1.5 | |
Rising edge | TR | A |
| 1.5 | 2 | |
Optical performance | ||||||
Light emitting area size | S | μm |
| 200×5 |
| |
Peak light power | PP | W |
| 50 | 60 | |
Center wavelength | λ | nm | 895 | 905 | 915 | |
Spectral width | Δ | nm | 3.0 | 4.0 | 5.5 | |
Fast axis divergence angle | θ⊥ | Deg | 20.0 | 25.0 | 30.0 | |
Slow axis divergence angle | θ | Deg | 6.0 | 8.0 | 10.0 | |
Thermal performance | ||||||
Wavelength temperature coefficient |
| nm/℃ |
| 0.27 |
| |
Operating temperature | To | ℃ | -40℃~+60℃ | |||
Storage temperature | Tg |
| -55℃~+85℃ | |||
TO Encapsulation Pulse Semiconductor Laser 905nm 35 W
Function and Advantage
1.TO encapsulation
2. Small Volume
3. Good reliability, longer life
Application field
1.Laser ranging
2. Laser fuze
LL905-2-35 | Parameter | Symbol | Unit | - |
Optical Prformance | ||||
Power | Po | W | 35 | |
Center wavelength | λC | nm | 905 | |
Spectral width | Δλ | nm | ±15 | |
Wavelength temperature coefficient | -- | nm/℃ | 0.3 | |
Light divergence angle | θ | o | 12 | |
θ⊥ | o | 30 | ||
Electrical Performance | ||||
Pulse width | Tw | ns | 100 | |
Duty ratio |
| % | 0.1 | |
Peak current | IP | A | 15 | |
Repetition frequency | f | KHz | 10 | |
Termal Performance | ||||
Operating temperature | Tc | ℃ | -40~+60 | |
Storage temperature | Top | ℃ | -55~+85 | |
Encapsulation Size( Unit: MM)
Function and Advantage
1.TO encapsulation
2. Small Volume
3. Good reliability, longer life
Application field
1. Laser ranging
2. Laser fuze
Typical Products Parameters(TA=25℃)
LL905-2-10 | Parameter | Symbol | Unit | - |
LL905-2-70 | Parameter | Symbol | Unit | - | ||||
Electrical Performance | Electrical performance | ||||||||||||
Power | Po | W | 10 | Power | Po | W | 75 | ||||||
Center Wavelength | λC | nm | 905 | Center wavelength | λC | nm | 905 | ||||||
Wavelength temperature coefficiet | -- | nm/℃ | 0.3 | Wavelength temperature coefficient | -- | nm/℃ | 0.27 | ||||||
Light divergence angle | θ | o | 12 | Light divergence angle | θ | o | 8 | ||||||
θ⊥ | o | 30 | θ⊥ | o | 25 | ||||||||
Optical Performance | Optical Performance | ||||||||||||
Pulse Width | Tw | ns | 100 | Pulse width | Tw | ns | 100 | ||||||
Duty Ratio |
| % | 0.2 | Duty ratio |
| % | 0.2 | ||||||
Peak Current | IP | A | 10 | Peak current | IP | A | 30 | ||||||
Repetition frequency | f | KHz | 10 | ||||||||||
Thermal Performance | Thermal Performance | ||||||||||||
Operating temperature | Tc | ℃ | -40~+60 | Operating temperature | Tc | ℃ | -40~+60 | ||||||
Storage temperature | Top | ℃ | -55~+85 | Storage temperature | Top | ℃ | -55~+85 | ||||||
Encapsulation Size( Unit: MM)
Detailed Showcase
Safety Advice
Dependign on the mode of operation, these devices emit highly concentrated visible light which can be hazardous to the human eye. Products which incorporate thes devices have to follow the safety precautions.
Our Services
1. Our company is committed to provide producti and service of the highest quality and greatest value to our cusomers.
2. We provide warranty and life time maintenance for our products.
3. If you have any technical questions, pls don't hesitate to contact us.
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