Ceramic Pyrolytic Boron Nitride PBN Plate,Bar And Crucible
USD $10 - $100 /Piece
Min.Order:10 Pieces
Hunan Fu Qiang Special Ceramic Manufacturing Co., Ltd.
Could Work In Max.2200 Degree Ceramic Pyrolytic Boron Nitride PBN Plate,Rod And Crucible
High Refractoriness Ceramic PBN Pyrolytic Boron Nitride Plate,Rod And Crucible
HIGH PURITY Ceramic PBN Pyrolytic Boron Nitride Plate,Rod And Crucible
Metallized Ceramic Tubes With Low Dielectric Loss And Dielectric Constant
The Professional Manufacturer For PBN Since Year 1980,The No.1 Exporter In China:
Pyrolytic Boron Nitride PBN Ceramic High Purity Plate,Crucible,Rod,Parts,The High Technology production & High Quality Assurance! Accept Customized Designs & Dimensions!
Product Overview:
Pyrolytic boron nitride (PBN) is a special ceramic material, obtained from special equipment by using chemical vapor deposition process. The pyrolytic boron nitride deposition process, like a "snow": hexagonal boron nitride snow sheet parallel to falls, to a piece of graphite base material, and reaches a certain thickness, the final cooling demolding made.
Main features:
1.Color ivory white to orange-brown, non-toxic, non-porous, easy to process.
2.Purity up to 99.99%, dense surface, air tightness.
3.High temperature strength with increasing temperature, 2200 °C reaches the maximum value.
4.Acid, alkali, salt and organic reagents, high temperature, and the vast majority of the molten metal, semiconductor material is not moist, not reaction.
5 Good thermal shock resistance, good thermal conductivity, low thermal expansion coefficient.
6 High resistance, high dielectric strength, a small dielectric constant, and low magnetic loss tangent, and having a good permeability of microwave and infrared properties.
7. Performance of the mechanical, thermal, electrical, and so there is a clear anisotropy.
The main parameters:
Performance | Unit | Index | |
Lattice constant | μ m | a:2.504×10-10 c:6.692×10-10 | |
Apparent density | g/cm3 | 2.0-2.19 | |
Microhardness (Knoop) (ab plane) | N/mm2 | 691.88 | |
Volume resistivity | Ω·cm | 3.11×1011 | |
Tensile strength (|| “C”) | N/mm2 | 153.86 | |
Bending strength | (|| “C”) | N/mm2 | 243.63 |
(⊥“C”) | N/mm2 | 197.76 | |
Modulus of elasticity |
| N/mm2 | 235690 |
Thermal conductivity |
| W/m·k | “a”direction “c”direction |
(200°C) | W/m·k | 60 2.60 | |
(900°C) | W/m·k | 43.70 2.80 | |
Dielectric strength (room temperature) | KV/mm | 56 |
Applications:
Heater, to prevent the generation of impurities in the semiconductor material manufacturing equipment, in order to improve the purity.
Overview: