HIGH PURITY Ceramic PBN Pyrolytic Boron Nitride Plate,Rod And Crucible
USD $10 - $100 /Piece
Min.Order:10 Pieces
Hunan Fu Qiang Special Ceramic Manufacturing Co., Ltd.
The Professional Manufacturer For PBN Since Year 1980,The No.1 Exporter In China:
Pyrolytic Boron Nitride PBN High Purity Ceramic Plate,Crucible,Rod,Parts,The High Technology production & High Quality Assurance! Accept Customized Designs & Dimensions!
Product Overview:
Pyrolytic boron nitride (PBN) is a special ceramic material, obtained from special equipment by using chemical vapor deposition process. The pyrolytic boron nitride deposition process, like a "snow": hexagonal boron nitride snow sheet parallel to falls, to a piece of graphite base material, and reaches a certain thickness, the final cooling demolding made.
Main features:
1.Color ivory white to orange-brown, non-toxic, non-porous, easy to process.
2.Purity up to 99.99%, dense surface, air tightness.
3.High temperature strength with increasing temperature, 2200 °C reaches the maximum value.
4.Acid, alkali, salt and organic reagents, high temperature, and the vast majority of the molten metal, semiconductor material is not moist, not reaction.
5 Good thermal shock resistance, good thermal conductivity, low thermal expansion coefficient.
6 High resistance, high dielectric strength, a small dielectric constant, and low magnetic loss tangent, and having a good permeability of microwave and infrared properties.
7. Performance of the mechanical, thermal, electrical, and so there is a clear anisotropy.
The main parameters:
Performance | Unit | Index | |
Lattice constant | μ m | a:2.504×10-10 c:6.692×10-10 | |
Apparent density | g/cm3 | 2.0-2.19 | |
Microhardness (Knoop) (ab plane) | N/mm2 | 691.88 | |
Volume resistivity | Ω·cm | 3.11×1011 | |
Tensile strength (|| “C”) | N/mm2 | 153.86 | |
Bending strength | (|| “C”) | N/mm2 | 243.63 |
(⊥“C”) | N/mm2 | 197.76 | |
Modulus of elasticity |
| N/mm2 | 235690 |
Thermal conductivity |
| W/m·k | “a”direction “c”direction |
(200°C) | W/m·k | 60 2.60 | |
(900°C) | W/m·k | 43.70 2.80 | |
Dielectric strength (room temperature) | KV/mm | 56 |
Applications:
Heater, to prevent the generation of impurities in the semiconductor material manufacturing equipment, in order to improve the purity.
Overview: