Mfr. #:
STF9NM60N
Manufacturer: STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 6.5 A
Rds On - Drain-Source Resistance: 745 mOhms
Vgs - Gate-Source Voltage: - 25 V, + 25 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 17.4 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 25 W
Channel Mode: Enhancement
Tradename: MDmesh
Series: STF9NM60N
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 26.7 ns
Product Type: MOSFET
Rise Time: 23 ns
factory pack quantiy: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 52.5 ns
Typical Turn-On Delay Time: 28 ns
Unit Weight: 0.068784 oz
