Mfr. #:
IRFBC40APBF
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220AB-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 600 V
Id - Continuous Drain Current: 6.2 A
Rds On - Drain-Source Resistance: 1.2 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 42 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 96 W
Channel Mode: Enhancement
Series: IRFBC
Packaging: Tube
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 18 ns
Height: 15.49 mm
Length: 10.41 mm
Product Type: MOSFET
Rise Time: 23 ns
Factory Pack Quantity: 1000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 13 ns
Width: 4.7 mm
Part # Aliases: IRFBC40APBF-BE3
Unit Weight: 0.068784 oz
