HDS120J020H3
3rd Generation 1200V/20A SiC Schottky Barrier Diode
Package Type: TO-247-2L
Characteristic
1.Zero Reverse Recovery Current
2.Positive temperature coefficient
3.Temperature-independent performance
4.High-speed switching
5.Low switching loss
6.Low heat dissipation requirements
Application
1.Switching power supply
2.Power factor correction
3.Motor drive,traction
4.Charging pile
Description
The HDS120J020H3 SiC Schottky Barrier Diode (SBD) has been developed using Huashentai 's advanced 3rd generation SiC SBD technology with the highest performance and reliability. It registers higher efficiency, higher operation temperature and lower loss and can be operated at higher frequency than Si-based solutions. As to the Schottky structure, it shows no recovery at turn-off and allows a low leakage current with reverse voltage up to 1200V. It can contribute to system miniaturization and achieve lightweight system design. Using RoHS compliant components, it is qualified for use in industrial application.