5SHY35L4520 5SXE10-0181 AC10272001R0101 Asymmetric Thyristor IGCT
Negotiable /Piece
Min.Order:1 Piece
HONG KONG SAUL ELECTRICAL LIMITED
5SHY35L4520 5SXE10-0181 AC10272001R0101 Asymmetric Thyristor IGCT
5SHY35L4520 5SXE10-0181 AC10272001R0101
The working principle of IGCT is based on GTO technology, but by using hard drive technology and integrated gate drive circuit and anti-parallel diode, the absorption circuit is omitted, so that both the GTO on-loss is low and the IGBT turn-off is uniform. This design makes IGCT have a wide application space in the field of medium voltage and high power. In addition, the IGCT turn-off time is 30% lower than the GTO, the power consumption is 40% lower, and the absorption circuit is not required, it can be switched on like a thyristor, and shut off like an IGBT, with very low power loss
5SHY35L4520 5SXE10-0181 AC10272001R0101
4500V 4000A
Country of Origin: Switzerland (CH)
Packing length: 439 mm
Packing height: 41 mm
Package width: 173 mm
Total packing weight: 2.7kg
Comparison of IGCT and IGBT
● Chip structure and manufacturing process
● Working principle and packaging form
● Comparison of operating frequency, turn-off ability, etc
IGCT application areas
High voltage and large capacity modular multilevel converter (MMC)
● Medium and high voltage high power converter
● On-site localization application
IGCT technical characteristics
● Dynamic loss is reduced by about 50%
● Low on-state voltage drop, high blocking voltage
● Integrated continuous current diode to achieve stable switching characteristics of thyristors
IGCT design and optimization
● Crimping technology research, balance parameter matching design
● Power module re-optimization design research
● IGCT clamping and protection technology
IGCT testing and validation
● High pressure test bench development
● IGCT high voltage power module design
● Status detection and logic control function verification
AC 800M controller PM864AK01 3BSE018161R1 Processor Unit - PM864K01,60M100 Condition Monitoring System-Bently Nevada 60M100-00,Power semiconductor device 5SHY5055L0002 3BHE019719R0101 GVC736BE101,Power semiconductor device 5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101,5SHY3545L0010 3BHB013088R0001 3BHE009681R0101 GVC750BE101,5SHY3545L0009 3BHB013085R0001 3BHE009681R0101 GVC750BE101,5SHY6545L0001 AC10272001R0101 5SXE10-0181,5SHX2645L0002 3BHB012961R0001 3BHE009681R0101 GVC750BE01,5SHY35L4520 5SXE10-0181 AC10272001R0101,5SHY35L4512,5SHY5055L0002 3BHE019719R0101 GVC736BE101,5SHX1445H0001 3BHL000391P0101 3BHB003230R0101 5SXE05-0152,5SHX2645L0004 3BHL000389P0104 3BHB003154R0101 5SXE04-0150/GVC707AE01
5SHX0445D0001
3BHL000462R0020
3BHL000181P0001
3BHL000495P0003
3BHL000259P0001
3BHL000382P0101
ABB IGCT 5SHX0445D0001
5SHY 3545L0006 IGCT MODULE
5SHX2645L0002 IGCT RC MODULE 91
IGCT MODULE 5SHY 3545L0009
5SHY 3545L0010 IGCT MODULE
5SHX 1960L0005, 91mm RC-IGCT
RC-IGCT 5SHX 1960L0006, 91MM GVC736
5SHX 0660F0002, 51MM RC-IGCT
5SHY 4045L0001 IGCT MODULE
5SHX 1060H0003, 68MM RC-IGCT
IGCT MODULE 5SHY 3545L0016, 4500V, 91MM
IGCT 4500V, 91MM, 5SHY 4045L0003
4500V, 91MM, 5SHY 4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
IGCT 4500V, 91MM, 5SHY 3545L0014
IGCT MODULE 5SHY 3545L0014, 4500V, 91MM
IGCT REPLACEMENT TOOL IGCT
HL000181R0001 2 PCS IGCT
5SHX0445D0001 IGCT
5SHX0445D0001 IGCT
5SHX0360D0001 IGCT
5SHX0445D0001
5SHX0360D0001 IGCT
5SHX0845F0001 IGCT
5SHX0845F0001 IGCT
5SHX0660F0001 IGCT
5SHX0660F0001 IGCT
5SHX1445H0002 IGCT
5SHX1060H0002 IGCT
5SHX2645L0001 IGCT
5SHX2645L0004 IGCT
5SHX1960L0001 IGCT
5SHX1960L0004 IGCT
5SHX1445H0001 IGCT
5SHX1445H0001 IGCT
5SHX0860H0001 IGCT