Power semiconductor device 5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101
5SHY4045L0004 3BHB021400R0002 3BHE039203R0101 GVC736CE101
—————— Introduction to IGCT ——————
High voltage, large current capacity, the blocking voltage has reached 3000V, the peak current is 1000A, and the maximum turn-off current density is 6000kA/m2;
IGCT integrated Gate Commutated Thyristors (IGCT integrated gate commutated thyristors = gate commutated thyristors + gate units) is a new type of power semiconductor switching device developed by medium voltage inverter for use in large power electronics packages. It was proposed by ABB in 1997. IGCT has made great progress in power, reliability, switching speed, efficiency, cost, weight and volume, and has brought a new leap to power electronic complete sets. IGCT integrates the GTO chip with the anti-parallel diode and gate drive circuit, and then connects it with the gate driver in a low inductance mode at the periphery, combining the stable turn-off ability of the transistor and the advantages of the low on-state loss of the thyristor, and gives play to the performance of the thyristor in the on-stage, and presents the characteristics of the transistor in the off-stage. IGCT has the characteristics of large current, high blocking voltage, high switching frequency, high reliability, compact structure, low on-off loss and so on, and has a good application prospect. It has been used in power system power grid device (100MVA) and medium power industrial drive device (5MW)IGCT in the field of medium voltage inverter successfully applied for 11 years (until 2009), because the high-speed switching capability of IGCT does not need buffer circuit, so the number of power components required is less, and the reliability of operation is greatly increased.
Model: S-113N
Old order number 3BHB018008R0001
New order number 3BHB018008R0101
Net weight: 175 kg
Country of origin: Poland
Phase module
Model: S-093H
Old order number: 3BHB030478R0009
New order number: 3BHB030478R0309
Net weight: 220 kg
Country of origin: Poland
Phase module
Power Electronic devices (power electronic devices), also known as power semiconductor devices, are used in power conversion and power control circuits with high power (usually referring to currents of tens to thousands of amps and voltages of hundreds of volts or more) electronic devices. It can be divided into semi-controlled devices, fully controlled devices and uncontrollable devices. The thyristor is a semi-controlled device with the highest voltage and current capacity in all devices. The power diode is an uncontrollable device with simple structure and principle and reliable operation. It can also be divided into voltage driven devices and current driven devices, of which GTO and GTR are current driven devices, and IGBT and power MOSFET are voltage driven devices.
3BHL000462R0020
3BHL000181P0001
3BHL000495P0003
3BHL000259P0001
3BHL000382P0101
ABB IGCT 5SHX0445D0001
5SHY 3545L0006 IGCT MODULE
5SHX2645L0002 IGCT RC MODULE 91
IGCT MODULE 5SHY 3545L0009
5SHY 3545L0010 IGCT MODULE
5SHX 1960L0005, 91mm RC-IGCT
RC-IGCT 5SHX 1960L0006, 91MM GVC736
5SHX 0660F0002, 51MM RC-IGCT
5SHY 4045L0001 IGCT MODULE
5SHX 1060H0003, 68MM RC-IGCT
IGCT MODULE 5SHY 3545L0016, 4500V, 91MM
IGCT 4500V, 91MM, 5SHY 4045L0003
4500V, 91MM, 5SHY 4045L0004GVC736 IGCT
TRIC IGCT 5SHY5055L0002 5.5KV 91MM
IGCT 4500V, 91MM, 5SHY 3545L0014
IGCT MODULE 5SHY 3545L0014, 4500V, 91MM
IGCT REPLACEMENT TOOL IGCT
HL000181R0001 2 PCS IGCT
5SHX06F6010 5500V 520A IGCT
5SHX08F4510 4500V 630A IGCT
5SHX10H6010 5500V 900A IGCT
5SHX14H4510 4500V 1100A IGCT
5SHX19L6010 5500V 1800A IGCT
5SHX19L6020 5500V 1800A IGCT
5SHX26L4510 4500V 2200A IGCT
5SHY35L4510 4500V 4000A IGCT