HDS120J030G3
3rd Generation 1200V/30A SiC Schottky Barrier Diode
Package Type: TO-247-3
Features
1.Revolutionary semiconductor material - Silicon Carbide (SiC)
2.No reverse recovery
3.High-speed switching performance
4.Temperature-independent switching behavior
5. System cost / size savings due to reduced cooling requirements
6.Junction temperature range from -55ºC to 175ºC
7.RoHS compliant
Potential Applications
1.Industrial power supplies: Industrial UPS
2.Battery chargers
3.Solar inverters
4.Switch mode power supplies
Description
The HDS120J030G3 SiC Schottky Barrier Diode (SBD) has been developed using Huashentai 's advanced 3rd generation SiC SBD technology with the highest performance and reliability. It registers higher efficiency, higher operation temperature and lower loss and can be operated at higher frequency than Si-based solutions. As to the Schottky structure, it shows no recovery at turn-off and allows a low leakage current with reverse voltage up to 1200V. It can contribute to system miniaturization and achieve lightweight system design. Using RoHS compliant components, it is qualified for use in industrial application.