Production Name：G12-18BB HJT Solar Cell
Wafer type: N-type monocrystalline silicon wafer
Size: 210 * 105 ± 0.25mm
Thickness: 110±15μm
Max. Power of Half Piece: 5.49W
Voltage at the Max. Power Point：0.671V
Current at the Max. Power Point：8.193A
Max. Efficiency: 24.90%
Higher Cell Conversion Efficiency -Average conversion efficiency higherthan 25%
Higher Power Output - Power gains 10% more than the conventional solar cells
Bifaciality - Up to 95% bifaciality
Zero Degradation - No PiD and LID effect
Lower Temperature Coefficient - 0.26% Low temperature coefficient
