TK17N65W,S1F
Manufacturer: Toshiba
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-247-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 650 V
Id - Continuous Drain Current: 17.3 A
Rds On - Drain-Source Resistance: 170 mOhms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 2.5 V
Qg - Gate Charge: 45 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 165 W
Channel Mode: Enhancement
Tradename: DTMOSIV
Series: TK17N65W
Packaging: Tube
Brand: Toshiba
Configuration: Single
Fall Time: 6 ns
Height: 20.95 mm
Length: 15.94 mm
Product Type: MOSFET
Rise Time: 15 ns
factory pack quantiy: 30
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 100 ns
Typical Turn-On Delay Time: 50 ns
Width: 5.02 mm
Unit Weight: 0.211644 oz
