GN3401
P-Channel Enhancement-Mode MOSFET (-30V, -4.2A)
Gem micro semiconductor Inc.
Features
• Super high dense cell trench design for low RDS(on).
• Rugged and reliable.
• SOT-23 package
• Ordering information:GN3401-G(Lead(Pb)-free and halogen-free
Notice
1. Specification of the products displayed herein is subject to change without notice. Continuous development may necessitate changes in
technical data without notice. GEMMICRO or anyone on its behalf assumes no responsibility or liability for any errors or inaccuracies.
2. Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only
and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications
are not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability
