Ceramics Ultrasonic Piezoelectric Transducer , 400W 30 Khz Ultrasonic Transducer PZT8
USD $140 - $180 /Piece
Min.Order:1 Piece
Hangzhou Qianrong Automation Equipment Co.,Ltd.
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PZT8 Piezoelectric Ceramics 30Khz 400W Ultrasonic Welding Transducer
Description:
Piezoelectric ceramic ultrasonic transducer is an electro-mechanical-acoustic transducer, which refers to the mutual conversion of energy between electrical signals and acoustic signals through the characteristics of materials. Piezoelectric ceramics are polycrystalline materials that can be applied to many fields by artificial firing. The external elastic deformation and the internal electrical leveling of the material are mutually converted by an external electric field and externally applied pressure, which is called an electrostrictive effect. The sintered ferroelectrics are subjected to polarization treatment of an electric field, so that the disordered internal polarization phenomenon becomes regular and ordered, and piezoelectric characteristics are generated.
Specifications:
Model | QR-3030-2BZ |
Frequency | 30khz |
Output power | 400 watt |
Joint bolt | M10 |
Ceramic disc Diameter | 30mm |
Qty of ceramic discs | 2pcs |
Capacitance | 2.6-3.1nf |
Amplitude | 6 um |
Application | Plastic welding machine |
The main performance parameters of piezoelectric transducer materials are:
(1) Piezoelectric strain constant
Indicates the amount of strain generated when the piezoelectric crystal is subjected to an external unit voltage.
(2) Piezoelectric voltage constant
Indicates the magnitude of the voltage gradient produced when the piezoelectric crystal is subjected to external unit stress. These two parameters are important parameters for measuring the emission properties of piezoelectric crystal materials. The larger the parameters, the better the emission performance and the higher the emission sensitivity.
(3) Frequency constant
The product of the natural frequency of the piezoelectric wafer and its thickness is a constant, called the frequency constant N, from which it is seen that the thickness of the wafer is inversely proportional to the resonant frequency, and the frequency of the ultrasonic wave mainly depends on the thickness of the wafer and the speed of sound in the wafer.