Sintered alpha silicon carbide (SiC) is produced by initially mixing fine (sub-micron) and pure silicon carbide powder with non-oxide sintering aids. The powdered material is formed or compacted by using most of the conventional ceramic forming processes such as die pressing, isostatic pressing and injection moulding. Following the forming stage the material is sintered in an inert atmosphere at temperatures above 2000°C. The sintered silicon carbide can then be machined to precise tolerances using a range of precision diamond grinding or lapping techniques. As with most advanced ceramics the cost of the component is reduced if the amount of diamond grinding is reduced i.e. either the material manufacturer can achieve the required tolerances “as sintered” or the designer removes unnecessary tolerances.