1. DDR1 333MHz, 400MHz. 256MB, 512MB, 1GB.

2. 184-pin socket type dual in line memory module (DIMM)

3. 2.6 V power supply

4. Data rate: 667Mbps (max. )

5. 2.5 V (SSTL-2 compatible) I/O

6. Double data rate architecture, two data transfers per clock

7. Bi-directional, data strobe (DQS) is transmitted/received with data, to be used in capturing data at the receiver

8. Data inputs and outputs are synchronized with DQS

9. DQS is edge aligned with data for read, center aligned with data for write

10. Differential clock inputs (CK and CK)

11. DLL aligns DQ and DQS transitions with CK transitions

12. Commands entered on each positive CK edge, data referenced to both edges of DQS

13. Auto precharge option for each burst access

14. Programmable burst length: 2, 4, 8

15. Programmable/CAS latency (CL): 3

16. Programmable output driver strength: Normal/weak

17. Refresh cycles: (8192 refresh cycles/64ms)

18. 7.8 US maximum average periodic refresh interval

19. 2 variations of refresh

20. Auto refresh

21. Self refresh