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High Brightness Pump Laser Diode 940nm 200m 0.22NA With Multi-Emitter Coupling
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Product Details
High Brightness Pump Laser Diode 940nm 200μm 0.22NA With Multi-Emitter Coupling
This product is build upon the foundation of multi-emitter coupling technology and simplified packaging. By coupling as many as possible emitters to a single fiber, BWT has advanced the laser brightness apparently. In multi-single emitter diode laser, many improved optical designs have been patented. A key feature of these devices is low current which easy for current design. These compact packaging and commercially recognized formats allow easy integration into the existing products.
With the design of low current and high voltage driver as well as serviceable of failed emitter make it low cost-of-ownership.
Features:
915nm, 940nm,976nm wavelength 200W output power 200µm fiber core diameter 0.22N.A. 1030nm-1200nm feedback protection
Applications:
| Specifications(18℃) | Symbol | Unit | K9XXDA9RN-200.0W | |
| Optical Data | CW-Output Power | Po | W | 200 |
| Center Wavelength | lc | nm | 915,940,976 | |
| Tolerance of λ | - | nm | ±3 | |
| Spectral Width (FWHM) | △λ | nm | <5 | |
| Temperature Drift of λ | - | nm/℃ | ~0.3 | |
| Fiber Data(1) | Fiber Core Diameter | Wc | µm | 200 |
| Numerical Aperture | N.A. | - | 0.22 | |
| Electrical Data | Operating Current | Iop | A | <13 |
| Threshold Current | Ith | A | 0.8 | |
| Conversion Efficiency | η | % | 48 | |
| Slope Efficiency | ηD | W/A | 16 | |
| Operating Voltage | Vop | V | 34 | |
| Reverse Voltage | Vre | V | 50 | |
|
Feedback Isolation |
Wavelength Range | l | nm | 1030-1200 |
| Isolation | - | dB | >30 | |
| Others | Operating Temperature (base of laser housing) | Top | ℃ | 18-25℃ |
| Storage Temperature(non-operating) | Tst | ℃ | -20~+70 | |
| Dimensions (fiber and connector not included) | - | mm | 130 x76 x22.5 | |
| Lead Soldering Temperature | Tis | ℃ | 260(10 sec.) |
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