Polysilicon silicon ingot furnace

The furnaces can make sun level silicon ingot , can also be used to purify other semiconductor materials .

Features

1,High control accuracy, adjusted crystallization rate freely

2,Induction melting method, increase mixing with high melting speed

3,Directional solidification insulation adopts specially made heating power

4,Has three current balance, maintenance costs low

5,Using thermostatic degrees controlling instrument

Main technical parameters

Melting capacity  10-300KG

Power  50-400KW

Heating rate  40 °C / Min

Furnace temperature uniformity  + 5 °C

Limiting vacuum  6.67×10^-2Pa

Pressure increase rate  0.01 PaL/S

Rated inflatable pressure  0.05 Mpa

Bubble means  drop unidirectional solidification

Servo control scope 0.01 mm - 6mm/Min

Directional solidification rat  0.03 mm - 0.5 mm/Min

Crucible rising velocity  80 to 100 mm/Min