Parameter

Symbol

Min.

Max.

Unit

Test condition

Storage temperature

T_st

-40

+100

°C

-

Operating temperature

T_op

-40

+85

°C

-

Reverse voltage

V_R

2

V

CW

Soldering temperature/time

260/10

°C/S

-

Parameter

Symbol

Min.

Typ.

Max.

Unit

Test condition

 Center wavelength

λc

1290

1310

1330

nm

Threshold current

Ith

-

5

15

mA

1310nm,25°C

Spectral width

λ

-

1

2

nm

CW,Ith+20mA

Output power

P

-

2.0

3.0

nW

CW,Ith+20mA,1310nm

Operating voltage

Vop

-

1.1

1.5

V

CW,Ith+20mA

Rise/ Fall time*

Tr/Tf

-

0.3

0.7

nS

CW,Ith+20mA

Monitor current

Im

0.1

0.7

-

mA

CW,Ith+20mA

Optical Isolation

Iso

30

-

-

dB

-

Tracking Error

ER

-1.0

1.0

dB

Im Hold Po=1mW,25°C

CW,Tc=-45°Cto+85°C

Modulation Bandwidth

BW

1.25

-

-

GHz

Po=2mW

Relative intensity Noise

RIN

-

-135

-

dBm/Hz

CW,2mw,50MHz~1000MHz

Third-Order Intermodulation

IMD3

-

-60

-

dBc

2stone,0dBm