Specifications
GDU type SiC heater1.Used for heating
2.Made of SiC
3.Excellent property
GDU type SiC heater
Silicon Carbide (SiC) heating elements is a non-metal electric heating element made from SiC as its main raw materials. It has some specific properties, such as low expansion coefficient, little deformation, stable chemical property, long service life, easy installation and maintenance, etc.
Silicon Carbide (SiC) heating elements can be directly used in an air atmosphere without any protection atmosphere. It is extensively used in the fields of metallurgy, ceramics, glass, machinery, analysis test, semiconductor, science & research and so on.
Diameter Length of hot zone (I) Length of cold zone Overall Length Range of Resistance Diameter Length of hot zone (I) Length of cold zone Overall Length Range of Resistance (d) (L) (d) (L) 8 100-300 60-200 240-700 2.1-7.2 30 300-2000 250-800 800-3600 0.4-4.0 12 100-400 100-350 300-1100 0.8-6.0 35 400-2000 250-800 900-3600 0.5-3.4 14 100-500 150-350 400-1200 0.8-5.6 40 500-2700 250-800 1000-4300 0.5-3.0 16 200-600 200-350 600-1300 0.8-4.4 45 500-3000 250-750 1000-4500 0.3-2.5 18 200-800 200-400 600-1600 0.7-5.8 50 600-2500 300-750 1200-4000 0.3-2.5 20 200-800 250-600 700-2000 0.6-5.0 54 600-2500 300-750 1200-4000 0.3-2.5 25 200-1200 250-700 700-2600 0.6-4.5
The influence of operating temperature and surface load on the rod surface in a different atmosphere | |||
Atmosphere | Furnace temperature(°C) | Surface load(W/cm²) | The influence on the rod |
Aammonia | 1290 | 3.8 | The action on SiC produces mathene and destorys the protection film of SiO2 |
Carbondioxide | 1450 | 3.1 | Corrode SiC |
Carbo monoxide | 1370 | 3.8 | Aabsorb carbon power and influence the protection film of SiO2 |
Halogen | 704 | 3.8 | Corrode SiC and destory the protection film of SiO2 |
Hydrogen | 1290 | 3.1 | The action on SiC produces mathene and destorys the protection film of SiO2 |
Nitrogen | 1370 | 3.1 | The action on SiC produces insulating layer of silicon nitride |
Sodium | 1310 | 3.8 | Corrode SiC |
Sulphur dioxide | 1310 | 3.8 | Corrode SiC |
Oxygen | 1310 | 3.8 | SiC Oxidized |
Water-vapour | 1090-1370 | 3.1-3.6 | The action on SiC produces hydrate of silicon |
Hydrocardon | 1370 | 3.1 | Aabsorb carbon power resulted in Hot pollution |