Specifications

Auto diode / TVS Diodes SM8S10 

Feature:

1. Junction passivation optimized design passivated anisotropic rectifier technology
2.  TJ=175°C capability suitable for high reliability and automotive requirement
3. Available in uni-directional polarity only
4. Low leakage current
5.  Low forward voltage drop
6. High surge capability
7. Meets AEC-Q101 qualified

Primary Characteristics

1> VWM:10V-43V

2> PPPM (10/1000μs): 6600W

3> PD:8W

4> IFSM:700A

5> TJ max.:175°C

Type: SM8S10

Stand-Off Voltage VMW: 10v

Breakdown Voltage VBR MIN : 11.1V

Breakdown Voltage VBR Max: 13.6V

Test Current IT: 5mA

Maximum Reverse Leakage at VWM ID(μA):15uA

Maximum Reverse at VWMTJ=175°C ID(μA):250uA

Maximum Peak Pulse Current at 10/1000μs Waveform: 351A

Maximum Clamping Voltageat IPPM VC: 18.8V