Part Number: Bipolar Transistor NPN 160V 0.6A MMBT5551 SOT-23

Feature:

Complementary to MMBT5401
Ideal for medium power amplification and switching

Maximum Ratings and Electrical Characteristics

Collector-Base Voltage: 180V

Collector-Emitter Voltage:160V

Emitter-Base Voltage: 6V

Collector Current -Continuous: 0.6A

Collector Power Dissipation: 0.3W

Junction Temperature: 150℃

Storage Temperature： -55 to 150℃

Range ： L=100-200   H=200-300

Production Information
1. Your complete source of TVS diode, schottky diode, super fast recovery rectifier and transistors back        by 50 years experiences!.
2. Raw material used by GPP wafer!
3. High power tvs diodes up to 30KW and 10KA, max breakdown voltage at 600V!
4. Both axial & high voltage rectifier available!
5. One stop service solution, axial series range from 1A to 15A, Surface mount series range from 1A to 8A, Bridge rectifier range from 0.5A to 60A!

LGE Roadmap 

LGE to become a globally present World class Brand.
Constant evolution to new and innovative products to satisfy the market demands.
Set up Overseas Branches and Development Centers.
Continuously Increase Investment to Complete Full Automatic Production Lines in 2018

LGE Production Line

 Full-automatic SOD-123 production line
* Full-automatic DO-214AC/SMA production line
* Full-automatic DO-214AB/SMB production line
* Full-automatic DO-214AA/SMC production line
* DO-201AD / DO-27 production line
* DO-41 Production line

More information, pls feel free to contact us!

Skype: lge-bella
What App: 86 150 175 26803
sales2(at)