Specifications

Silicon Bidrectional Diac DB3 D0-35

Products Description 

The three layer, two termnal, axial lead, hermetically sealed diacs are designed specifically for triggering thristors. They demonstrate low breakover current at breakover voltage as they with stand peak pulse current, the breakover symmetry is within three volts.These diacs are intended for use in thyrisitors phase control, circuits for lamp dimming universal motor speed control, and heat control.

Products Parameter

Power dissipation on printed T_A=50°c circuit(L=10mm)      Pc: 150mW

Repetitive peak on-state current tp=20uS f=120Hz     I_TRM: 2.0A

Operating junction temperature T_J: -40--+125°c

Storage temperature T_STG: -40--+125°c

Breakover voltage VBO: 32V  (Min: 28V Max: 36V)

Breakover voltage symmetry: 3.0V (Max)

Dynamic breakover voltage: 5.0V (Min)

Output voltage: 5.0V

Breakover current: 100uA(Max)

Rise time: 1.5uS

Leakage current: 10.0uA(Max)

LGE

LGE is the plant specialized in eletronic component, more than 1300 workers, supplying diodes, transistor with high quality and competitive price.