Grade

Solar grade purity:  99.9999% (6N)

Size

125 x 125 mm

Origin

Made in Russia

1) Growth method

CZ

2) Elecrocoductivity type/dopant

P/boron

3) Crystallographic axis orientation

<100>

4) Resistivity (central point, on post-annealed samples)

0,5 ÷ 6,0 Ohm.cm

5) Resistivity radial spread

≤ 15 %

6) Carbon content

              17      -3

≤1,0 10     cm

7) Oxygen content (k=2,45)

              18     -3

≤1,0 10     cm

8) Minor carrier lifetime

≥10 µs

9) Leneage, twins, swirls EPD

Not allowed

         3       -2

2 10    cm

10) Pseudosquare side (in center)

125 ± 1,0 mm

11) Difference of the sides length measured in center, for two relatively perpendicular directions

≤ 0,3 mm

12) Diameter difference for two relatively perpendicular directions

≤ 0,2 mm

13) Butt-end surface orientation deviation

± 3º

14) Angle between pseudosquare sides

90 ± 1º

15) Deviation of wafer surface orientation

<100>

± 3º

16) Thickness

240 ± 25µm

17) TTV

≤ 50 µm

18) Bow

≤ 50 µm

19) Front and back surface quality:

- chips of 0,5 mm in size

Marks of saw, oil and the other contaminations

Wire saw cutting and cleaning

1 pc (per 5 % of the lot)

None

20) Edge profile

Without edge profile

21) Wafers annealing

Without annealing