Specifications
We have advanced equipment and Wafer production capacity, reliable property and outstanding quality ensure high EFF solar cells.
156 Multi crystalline Wafer Specification |
Growth Method | DSS |
Conductive Type | P |
Dopant | B |
Resistivity(ρ) | 0.5 -3.0Ω·cm or 3.0-6.0Ω·cm |
Minority Carrier Lifetime | ≥2μs measured in wafer |
Oxygen Content (Oi) | ≤1.0*1018 /cm3 |
Carbon Content(C) | ≤8.0*1017/cm3 |
Dimension | 156*156±0.5mm |
Square Sides Angle | 45° ± 10° |
Streight Sections Length Deviation | 0.5-1 mm |
Thickness | 200±20 μm |
TTV | ≤30μm |
Saw Mark | ≤20μm |
Chips | Depth<0.3mm;Length<0.5mm |
Micro Cracks | Not Allowed |
Appearance | No Stain, No Edge Breakage, No Chips |
