IRF7509TRPBF
Manufacturer: Infineon
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: Micro-8
Transistor Polarity: N-Channel, P-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 2.7 A
Rds On - Drain-Source Resistance: 200 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 700 mV
Qg - Gate Charge: 7.8 nC, 7.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 1.25 W
Channel Mode: Enhancement
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Infineon Technologies
Configuration: Dual
Fall Time: 5.3 ns, 9.3 ns
Forward Transconductance - Min: 1.9 S, 0.92 S
Height: 1.11 mm
Length: 3 mm
Product Type: MOSFET
Rise Time: 10 ns, 12 ns
factory pack quantity: 4000
Subcategory: MOSFETs
Transistor Type: 1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time: 12 ns, 19 ns
Typical Turn-On Delay Time: 4.7 ns, 9.7 ns
Width: 3 mm
Unit Weight: 0.006743 oz
