Mfr. #:
FGA40N65SMD
Manufacturer: onsemi
Product Category: IGBT Transistors
RoHS: Details
Technology: Si
Package / Case: TO-3PN
Mounting Style: Through Hole
Configuration: Single
Collector- Emitter Voltage VCEO Max: 650 V
Collector-Emitter Saturation Voltage: 1.9 V
Maximum Gate Emitter Voltage: - 20 V, + 20 V
Continuous Collector Current at 25 C: 80 A
Pd - Power Dissipation: 349 W
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Series: FGA40N65SMD
Packaging: Tube
Brand: onsemi / Fairchild
Gate-Emitter Leakage Current: 400 nA
Product Type: IGBT Transistors
Factory Pack Quantity: 30
Subcategory: IGBTs
Unit Weight: 0.225789 oz
