Mfr. #:
IXTQ60N20T
Manufacturer: IXYS
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-3P-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 200 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 40 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 3 V
Qg - Gate Charge: 73 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 175 C
Pd - Power Dissipation: 500 W
Channel Mode: Enhancement
Tradename: HiPerFET
Packaging: Tube
Brand: IXYS
Configuration: Single
Fall Time: 22 ns
Forward Transconductance - Min: 40 S
Product: Power MOSFET Modules
Product Type: MOSFET
Rise Time: 13 ns
factory pack quantiy: 30
Subcategory: MOSFETs
Transistor Type: 1 N-Channel
Type: Trench
Typical Turn-Off Delay Time: 33 ns
Typical Turn-On Delay Time: 22 ns
Unit Weight: 0.056438 oz
