IRF7526D1TR
International Rectifier
l Co-packaged HEXFET Power
MOSFET and Schottky Diode
l P-Channel HEXFET
l Low VF Schottky Rectifier
l Generation 5 Technology
l Micro8TM Footprint
Description:
The FETKYTM family of co-packaged HEXFETs and Schottky diodes offer the
designer an innovative board space saving solution for switching regulator
applications. Generation 5 HEXFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. Combining this technology
with International Rectifier's low forward drop Schottky rectifiers results in an
extremely efficient device suitable for use in a wide variety of portable electronics
applications like cell phone, PDA, etc.
The new Micro8TM package, with half the footprint area of the standard SO-8, provides
the smallest footprint available in an SOIC outline. This makes the Micro8TM an ideal
device for applications where printed circuit board space is at a premium. The low
profile (<1.1mm) of the Micro8TM will allow it to fit easily into extremely thin application
environments such as portable electronics and PCMCIA cards.
Notes:
Repetitive rating – pulse width limited by max. junction temperature (see Fig. 9)
ISD ≤ -1.2A, di/dt ≤ 160A/µs, VDD ≤ V(BR)DSS, TJ ≤ 150°C
Pulse width ≤ 300µs – duty cycle ≤ 2%
When mounted on 1 inch square copper board to approximate typical multi-layer PCB thermal resistance
