CJ3407
P-Channel Enhancement Mode Field Effect Transistor
SOT-23 Plastic-Encapsulate MOSFETS
General Description
The CJ3407 uses advanced trench technology to provide excellent
RDS(on) with low gate charge. This device is suitable for use as a load
switch or in PWM applications
MARKING: 3407
Maximum ratings (Ta=25℃ unless otherwise noted)
Drain-Source Voltage -30V
Drain-Source Voltage ±20V
Continuous Drain Current -4.1A
Power Dissipation 350mW
Thermal Resistance from Junction to Ambient 357℃/W
Junction Temperature: 150℃
Storage Temperature -55~+150 ℃
Factory Pack Quantity: 3000
