STP5N105K5
STMicroelectronics
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: Through Hole
Package / Case: TO-220-3
Transistor Polarity: N-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 1.05 kV
Id - Continuous Drain Current: 3 A
Rds On - Drain-Source Resistance: 3.5 Ohms
Vgs - Gate-Source Voltage: - 30 V, + 30 V
Vgs th - Gate-Source Threshold Voltage: 4 V
Qg - Gate Charge: 12.5 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 85 W
Channel Mode: Enhancement
Tradename: MDmesh
Series: STP5N105K5
Packaging: Tube
Brand: STMicroelectronics
Configuration: Single
Fall Time: 24 ns
Product Type: MOSFET
Rise Time: 8.5 ns
factory pack quantiy: 1000
Subcategory: MOSFETs
Typical Turn-Off Delay Time: 31 ns
Typical Turn-On Delay Time: 15.5 ns
Unit Weight: 0.068784 oz
