Mfr. #:
SI7997DP-T1-GE3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: PowerPAK-SO-8
Transistor Polarity: P-Channel
Number of Channels: 2 Channel
Vds - Drain-Source Breakdown Voltage: 30 V
Id - Continuous Drain Current: 60 A
Rds On - Drain-Source Resistance: 5.5 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 1 V
Qg - Gate Charge: 106 nC
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 46 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI7
Packaging: Reel
Packaging: Cut Tape
Packaging: kxxReel
Brand: Vishay Semiconductors
Configuration: Dual
Fall Time: 40 ns, 40 ns
Forward Transconductance - Min: 71 S
Height: 1.04 mm
Length: 6.15 mm
Product Type: MOSFET
Rise Time: 10 ns, 50 ns
factory pack quantiy: 3000
Subcategory: MOSFETs
Transistor Type: 2 P-Channel
Typical Turn-Off Delay Time: 80 ns, 115 ns
Typical Turn-On Delay Time: 15 ns, 60 ns
Width: 5.15 mm
Part # Aliases: SI7997DP-GE3
Unit Weight: 0.017870 oz
