Mfr. #:
SI2337DS-T1-E3
Manufacturer: Vishay
Product Category: MOSFET
RoHS: Details
Technology: Si
Mounting Style: SMD/SMT
Package / Case: SOT-23-3
Transistor Polarity: P-Channel
Number of Channels: 1 Channel
Vds - Drain-Source Breakdown Voltage: 80 V
Id - Continuous Drain Current: 2.2 A
Rds On - Drain-Source Resistance: 270 mOhms
Vgs - Gate-Source Voltage: - 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage: 2 V
Qg - Gate Charge: 17 nC
Minimum Operating Temperature: - 50 C
Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 2.5 W
Channel Mode: Enhancement
Tradename: TrenchFET
Series: SI2
Packaging: Reel
Packaging: Cut Tape
Packaging: KXXReel
Brand: Vishay Semiconductors
Configuration: Single
Fall Time: 12 ns
Forward Transconductance - Min: 4.3 S
Height: 1.45 mm
Length: 2.9 mm
Product Type: MOSFET
Rise Time: 15 ns
factory pack quantity: 3000
Subcategory: MOSFETs
Transistor Type: 1 P-Channel
Typical Turn-Off Delay Time: 20 ns
Typical Turn-On Delay Time: 10 ns
Width: 1.6 mm
Part # Aliases: SI2337DS-T1-BE3 SI2337DS-E3
Unit Weight: 0.000282 oz
