MJD5731T4G
Manufacturer: onsemi
Product Category: Bipolar Transistors - BJT
RoHS: Details
Mounting Style: SMD/SMT
Package / Case: TO-252-3
Transistor Polarity: PNP
Configuration: Single
Collector- Emitter Voltage VCEO Max: 350 V
Collector- Base Voltage VCBO: -
Emitter- Base Voltage VEBO: 5 V
Collector-Emitter Saturation Voltage: 1 V
Maximum DC Collector Current: 1 A
Pd - Power Dissipation: 15 W
Gain Bandwidth Product fT: 10 MHz
Minimum Operating Temperature: - 55 C
Maximum Operating Temperature: + 150 C
Series: MJD5731
Packaging: Reel
Packaging: Cut Tape
Packaging: kxxReel
Brand: onsemi
Continuous Collector Current: 1 A
DC Collector/Base Gain hfe Min: 30
Height: 2.38 mm
Length: 6.73 mm
Product Type: BJTs - Bipolar Transistors
Factory Pack Quantity: 2500
Subcategory: Transistors
Technology: Si
Width: 6.22 mm
Unit Weight: 0.012381 oz