silicon epitaxial planar npn darlington transistors designed for dummies small signal, general purpose 2N2222A
| Product Category: | Bipolar Transistors - BJT |
| RoHS: | Details |
| Mounting Style: | Through Hole |
| Package / Case: | TO-18 |
| Transistor Polarity: | NPN |
| Configuration: | Single |
| Collector- Emitter Voltage VCEO Max: | 40 V |
| Collector- Base Voltage VCBO: | 75 V |
| Emitter- Base Voltage VEBO: | 6 V |
| Collector-Emitter Saturation Voltage: | 1 V |
| Maximum DC Collector Current: | 0.8 A |
| Gain Bandwidth Product fT: | 300 MHz |
| Maximum Operating Temperature: | + 150 C |
| Series: | 2N2222 |
| DC Collector/Base Gain hfe Min: | 35 |
| Minimum Operating Temperature: | - 65 C |
| Packaging: | Bulk |
| Pd - Power Dissipation: | 0.4 W |
| Factory Pack Quantity: | 2000 |
| Part # Aliases: | BK |
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