we can provide SiC crystal boul, Silicon Carbide (SiC) Wafers and Substrates in different quality grades for researchers and industry manufacturers.
Browse silicon carbide materials below.
Silicon Carbide (SiC) Wafers and Substrates
1. 4H-SiC N-Type Wafer Substrate
Diameter: 4″ up to 6″
Grade: Production, Research, Dummy
Thickness: 350µm or 500µm
Micropipe Density: 0.5/cm² up to 10/cm²
Resistivity: 0.015 – 0.025 ohm.cm
2. 4H-SiC Semi-insulating Substrate
Diameter: 4″ up to 6″
Grade: Production, Research, Dummy
Thickness: 350µm or 500µm
Micropipe Density: 0.5/cm² up to 10/cm²
Resistivity:≥1E8Ω•cm
