8 inch P high purity single crystal silicon wafer diameter 200mm thickness 650-725um crystal to 100, 110 for research

Product name:

8 inch P high purity single crystal silicon wafer diameter 200 thickness 650-725 crystal to 100, 110 for research

Growth mode:

Straight pulling single crystal (CZ)

Diameter and tolerance:

200±0.3mm

Doping type:

boron

Orientation:

<111><100><110>

Resistivity:

0.001-50(Ω•cm)customizable

TIR:

<3μm

TTV:

<10μm

BOW:

<10μm

Ra:

<0.5nm

Pewaferr:

< 10 (for size > 0.3μm)

Thickness:

650-725μm

Notch:

notch

finshed of edge

Finshed/as etched

Edge profile:

Round

Scratch:

1cm<3EA

Edge defect:

<1mm

Back:

No control