Three-inch P-type single-sided polished silicon wafer crystal to <111> \ <100> \ <110> Thickness 300-400um for research

Product name:

Three-inch P-type single-sided polished silicon wafer crystal to <111> <100> <110> Thickness 300-400mm for research

Growth mode:

Straight pulling single crystal (CZ)

Diameter and tolerance:

76.2±0.3mm

Doping type:

boron

Orientation:

<111><100><110>

Resistivity:

0.001-50(Ω•cm)customizable

TIR:

<3μm

TTV:

<10μm

BOW:

<10μm

Ra:

<0.5nm

Pewaferr:

< 10 (for size > 0.3μm)

Thickness:

300μm-400μm

Edge profile:

Round

Back:

No control