S-073N 3BHB009884R0021

S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021S-073N 3BHB009884R0021

Integrated gate commutated thyristor Ig integrated gate commutated thyristor IGCT (integrated gate commutated thyristor) some manufacturers are also called GCT (gate commutated thyristor), i.e. gate commutated thyristor, which is a new power electronic device emerging in the late 1990s.

Integrated gate commutated thyristor IGCT combines the advantages of IGBT and GTO. Its capacity is equivalent to that of GTO, but its switching speed is 10 times faster than that of GTO. Moreover, it can eliminate the huge and complex buffer circuit of GTO application, but the driving power required is still large. At present, IGCT is in fierce competition with IGBT and other new devices, trying to finally replace GTO in high-power applications. The industry believes that the high proportion of power electronic devices is one of the two characteristics of the new power system

 For example, the internationally leading flexible DC transmission technology in the fields of new energy grid connection, offshore wind power transmission and ultra-high voltage is a combination of advanced technologies in power electronics, power system and communication principles. Modular multi-level converter, DC circuit breaker and DC transformer based on power electronic technology are the key equipment for building DC power grid. Large capacity semiconductor devices are the most core components of these key equipment. Low cost, low loss and high reliability large capacity semiconductor devices are crucial to improve the economy and safety of DC power grid equipment. Among the high-power power electronic devices, IGBT (insulated gate bipolar transistor) is mainly used at present, and IGCT (integrated gate to gate converter thyristor) is a more potential semiconductor device. The market is mainly occupied by foreign enterprises such as abb in Switzerland, Infineon in Germany and Ge in the United States. There is a broad space for domestic substitution.

Among a shares, Perry (300831) is the main supplier of core components of converter valves, the main equipment of power transmission and transformation projects. The company actively promotes the research and development of new power electronic devices such as IGCT, and has formed a series of products through technical research; Times electric (688187) is the third enterprise in the world that has the ability to independently produce IGCT, and is also the only enterprise in China that has mastered the full set of technologies of thyristor, IGCT, IGBT and power components. The IGCT produced by times Electric has been widely used in the field of rail transit, and is carrying out IGCT application with domestic wind turbine manufacturers. If you want to achieve better results, you still need to use tension sensors, Or use the swing rod of the air cylinder to track the midpoint of the position loop, so as to make integrated adjustment by synchronizing with the main engine. When the speed needs to be increased, directly adjust the given speed of the main engine, and the winding speed can be automatically synchronized.

Now the frequency converter technology is relatively mature, and the DC motor speed regulation is often used for the transformation of some old equipment, and the new production lines are basically AC. If the individual speed cannot be adjusted, the current setting value of the A6 port of the 590 can only be set a little higher. The winding system of the slitting equipment uses the Parker (original continental 590) DC governor instead of the closed-loop tension control. Instead, the open-loop tension module inside the governor is used to realize the control. The essential control is to control the current. In addition, the taper should be used during the winding process. The current setting should be gradually reduced according to a certain curve. Thyristor IGCT is a new type of power electronic device, It integrates the GCT chip and its gate driver in a low inductance manner, and integrates the advantages of stable switching off capability of transistor and low on state loss of thyristor. It has the characteristics of large current, high voltage, high switching frequency, high reliability, compact structure, low loss, low cost and high yield. Therefore, it has broad application prospects. Therefore, it is necessary to conduct in-depth application research on IGCT devices and design a set of equipment that can test IGCT devices with high voltage and large current. Starting from IGCT device, this paper introduces the structure, working principle, key technology of IGCT device, and the ratio of IGCT to GTO and IGBT

Compare the characteristic parameters of IGCT and the principle of gate drive circuit. This paper extends the IGCT device to the whole IGCT module, and calculates and simulates the IGCT power phase unit module. The circuit principle of IGCT phase unit module is described as a whole. The influence of clamp protection circuit in phase cell module on the on and off process of the device is analyzed by simulation and calculation. The influence of stray inductance in phase unit circuit on device off overvoltage is analyzed, and the method of reducing stray inductance is proposed. The influence of anti parallel diode on IGCT device is expounded. It is pointed out that the reverse recovery characteristic of diode has great influence on the off overvoltage of IGCT. Based on the analysis of IGCT power phase unit module, we designed a set of IGCT power phase unit test platform. The platform is composed of a power control cabinet and a device test cabinet. In the design, the safety of the test and the diversity of the test functions are mainly considered. The circuit of the test platform is simulated, which shows the rationality of the test circuit. According to the simulation and calculation, the selection of relevant devices and the manufacture of the test platform are carried out. Finally, some preliminary pulse tests of IGCT phase units are carried out on the test experimental platform, and some test results are selected to analyze the measured waveforms. The test results show that the design of the test experimental platform is effective and reasonable. It can complete the test of IGCT power phase units, assist the further research of IGCT devices, and lay a foundation for using IGCT devices to replace the existing IGBT devices of H-bridge units in medium voltage frequency conversion.

An ideal power device should have the following ideal static and dynamic characteristics: in the off state, it can withstand high voltage; In the on state, it can withstand large current and has a very low voltage drop; When the switch is switched, the switching speed is fast, and it can withstand high di / dt and DV / dt. At the same time, it shall have full control function.