Production Name：G12-0BB HJT Solar Cell
Wafer type: N-type monocrystalline silicon wafer
Size: 210 * 105 ± 0.25mm
Thickness: 120 ± 15μm
Max. Power of Half Piece: 5.47W
Voltage at the Max. Power Point：0.67V
Current at the Max. Power Point：8.176A
Max. Efficiency: 24.80%
in the new generation of high-efficiency solar cells, HJT technology lead a new round in PV technology. With a single hybrid structure integrating the advantages of crystaline siicon and amorphous sicon thin film technology HJT solar cell has the advantages of high eficiency and stablity with a low-temperature and simplified manufacturing proceduresExtremely low temperature coeficient so as to avoid lD and PlD effect, There is no color diference between the front and back sidethe bifaciality is more than 95%. The backside has an obvious advantage in power generation, which ensures a stable and high eficiencypower output reaardlessof seasonal circulation and climate change.
