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Indium Phosphide (InP) is a key semiconductor material that enables optical systems to deliver the performance required for data center, mobile backhaul, metro and long-haul applications. Lasers, photodiodes and waveguides fabricated on InP operate at the optimum transmission window of glass fiber, which enable efficient fiber communications.
Applications
Indium phosphide finds applications in the following:
1. It has superior electron velocity due to which it is used in high-frequency and high-power electronics.
2. It has a direct bandgap unlike many semiconductors hence is used for optoelectronics devices like laser diodes.
3. Indium phosphide is also used as a substrate for optoelectronic devices based on epitaxial indium gallium arsenide.
Chemical Properties
The chemical properties of indium phosphide are provided in the table below:
| Chemical Properties | |||
| Chemical Formula | InP | ||
| Molecular Weight | 145.792 g/mol | ||
| CAS No. | 22398-80-7 | ||
| IUPAC Name | Indium phosphide | ||
| Group | III-V | ||
| Band Gap | 1.344 eV | ||
| Band Gap Type | Direct | ||
| Crystal Structure | Zinc Blende | ||
| Symmetry Group | Td2-F43m | ||
| Lattice Constant | 5.8687 Angstroms | ||
| InP Single Chip Parameters(VGF Crystal Growth Process Technology) | ||||||
| Item | Diameter (inch) | Type | Carrier Concentration (cm-3) | Electron Mobility (cm2/V.s) | Resistivity (Ω.m) | Dislocation Density (cm-2) |
| InP | 2 | N | ≤1×1018 | (3.5-4)×103 | ＜1×103 | |
| S-InP | 2 | N | (0.5-1)×1018 | (2-4)×103 | ＜500 | |
| 3 | (0.5-1)×1018 | (2-4)×103 | ＜1×103 | |||
| 4 | (0.5-1)×1018 | (2-4)×103 | ＜2×103 | |||
| Zn-InP | 2/3/4 | P | (0.5-1)×1018 | 50-70 | ＜1×103 | |
| Fe-InP | 2 | SI | ＞2000 | ＞0.5×107 | ＜2.5×103 | |
| 3 | ||||||
| 4 | ||||||
| Single-side and double-side polishing, epiready. Crystal orientation(100). Standard thickness for two-inch chip is 350±25μm,three-inch chip is 600±25μm and four-inch chip is 625±25μm,others depend on different processing requirements. | ||||||
